Browsing by author "Chin, A."
Now showing items 1-3 of 3
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Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
Wang, X.P.; Yu, HongYu; Li, M.F; Zhu, C.X.; Biesemans, Serge; Chin, A.; Sun, Y.; Feng, Y.; Lim, A.; Yeo, Y.C.; Loh, W.Y.; Lo, G.Q.; Kwong, D.L (2007-04) -
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
Wang, X.P.; Li, M.F.; Yu, HongYu; Yang, J.J.; Chen, J.D.; Zhu, C.X.; Du, A.Y.; Loh, W.Y.; Biesemans, Serge; Chin, A.; Lo, G.Q.; Kwong, D.L. (2008) -
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
Wang, X.P.; Lim, A.E.J.; Yu, HongYu; Li, M.F.; Ren, C.; Loh, W.Y.; Zhu, C.X; Chin, A.; Trigg, A.D.; Yeo, Y.C.; Biesemans, Serge; Lo, G.Q.; Kwong, D.L. (2007)