Browsing by author "Agopian, P. G. D."
Now showing items 1-3 of 3
-
Dynamic threshold voltage influence on Ge pMOSFET hysteresis
Oliveira, A. V.; Agopian, P. G. D.; Martino, A.; Arimura, Hiroaki; Mitard, Jerome; Mertens, Hans; Mocuta, Anda; Collaert, Nadine; Simoen, Eddy; Claeys, Cor; Thean, Aaron (2015) -
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
Silva, V. C. P.; Martino, J. A.; Simoen, Eddy; Veloso, Anabela; Agopian, P. G. D. (2023) -
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Agopian, P. G. D.; Carmo, G. J.; Martino, J. A.; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2021)