Browsing by author "Vantomme, A."
Now showing items 1-4 of 4
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Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure
Fleischmann, Claudia; Schouteden, K.; Merckling, Clement; Sioncke, Sonja; Meuris, Marc; Van Haesendonck, C.; Temst, K.; Vantomme, A. (2012) -
Direct structural identification and quantification of the split-vacancy configuration for implanted Sn in diamond
Wahl, U; Correia, J.G.; Villarreal, R; Bourgeois, Emilie; Gulka, Michal; Nesladek, Milos; Vantomme, A.; Pereira, L.M.C. (2020) -
Growth and characterization of atomic layer deposited WCxNy
Martin Hoyas, Ana; Travaly, Youssef; Schuhmacher, Jorg; Sajavaara, T.; Whelan, Caroline; Eyckens, Brenda; Richard, Olivier; Giangrandi, Simone; Brijs, Bert; Jonas, A.M.; Vantomme, A.; Vandervorst, Wilfried; Celis, Jean-Pierre; Maex, Karen (2005) -
(Si)GeSn requirements for optical device applications and solar cells
Takeuchi, Shotaro; Vincent, Benjamin; Temst, Kristiaan; Vantomme, A.; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-05)