Browsing by author "Lorenzini, Martino"
Now showing items 21-28 of 28
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Simulation of 0.35 μm / 0.25 μm CMOS technology doping profiles
Lorenzini, Martino; Haspeslagh, Luc; Van Houdt, Jan; Maes, Herman (2001) -
Simulation of 0.35μm/0.25μm CMOS technology doping profiles
Lorenzini, Martino; Haspeslagh, Luc; Van Houdt, Jan; Maes, Herman (2000) -
Snapback circuit model for cascaded NMOS ESD over-voltage protection structures
Vassilev, Vesselin; Lorenzini, Martino; Jansen, Philippe; Vashchenko, V.; Yang, J.J.; Concannon, A.; Archer, D.; Groeseneken, Guido; Mahadeva Iyer, Natarajan; Terbeek, M.; Thijs, Steven; Choi, B.J.; Steyaert, M.; Maes, Herman (2003-09) -
Source-side injection modeling by means of the Spherical-Harmonics Expansion of the Boltzmann transport equation
Lorenzini, Martino; Wellekens, Dirk; Haspeslagh, Luc; Van Houdt, Jan (2004-09) -
Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers
Degraeve, Robin; Kaczer, Ben; Schuler, Franz; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Houdt, Jan; Haspeslagh, Luc; Tempel, Georg; Groeseneken, Guido (2001) -
Study of secondary electron injection phenomena in deep sub-micron MOSFETs and flash cells
Xue, Gang; Van Houdt, Jan; Wellekens, Dirk; Haspeslagh, Luc; Lorenzini, Martino; Keppens, Bart; Maes, Herman (2000) -
Time dependent anomalous charge loss modeling in flash memories and an accelerated testing procedure
Schuler, Franz; Tempel, Georg; Melzner, H.; Hendrickx, Paul; Wellekens, Dirk; Lorenzini, Martino; Van Houdt, Jan (2001) -
Vorticity quantum numbers for confined electrons
Chibotaru, L.F.; Ceulemans, A.; Lorenzini, Martino; Moshchalkov, V.V. (2003)