Browsing by author "Sankaran, Kiroubanand"
Now showing items 21-40 of 50
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Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
First principles simulations - Guiding tool for industrial research
Clima, Sergiu; Mees, Maarten; Sankaran, Kiroubanand; Pourtois, Geoffrey (2012) -
First principles simulations of oxygen diffusion in RRAM materials
Clima, Sergiu; Sankaran, Kiroubanand; Mees, Maarten; Chen, Yangyin; Goux, Ludovic; Govoreanu, Bogdan; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia; Pourtois, Geoffrey (2012) -
First-principles investigation of high-k dielectrics for non-volatile memories
Pourtois, Geoffrey; Sankaran, Kiroubanand; Radu, Iuliana; Degraeve, Robin; Zahid, Mohammed; Van Elshocht, Sven; Adelmann, Christoph; De Gendt, Stefan; Heyns, Marc; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia; Rignanese, G.M.; Van Houdt, Jan (2010) -
First-principles investigation of high-k dielectrics for non-volatile memories
Pourtois, Geoffrey; Sankaran, Kiroubanand; Radu, Iuliana; Degraeve, Robin; Zahid, Mohammed; Van Elshocht, Sven; Adelmann, Christoph; De Gendt, Stefan; Heyns, Marc; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia; Rignanese, G. M.; Van Houdt, Jan (2010) -
First-principles investigation of the electron spin resonance parameters of germanium interfacial dangling bond centers
Sankaran, Kiroubanand; Pourtois, Geoffrey; Houssa, Michel; Stesmans, Andre; Caymax, Matty; Heyns, Marc (2009) -
First-principles investigation of thickness-dependent electrical resistivity for low-dimensional interconnects
Van Troeye, Benoit; Sankaran, Kiroubanand; Tokei, Zsolt; Adelmann, Christoph; Pourtois, Geoffrey (2023) -
First-principles modeling of intrinsic and extrinsic defects in Gamma-Al2O3
Sankaran, Kiroubanand; Pourtois, Geoffrey; Degraeve, Robin; Zahid, Mohammed; Rignanese, Gian-Marco; Van Houdt, Jan (2010) -
First-principles simulation of oxygen diffusion in HfOx: role in the resistive switching mechanism
Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Mees, Maarten; Sankaran, Kiroubanand; Govoreanu, Bogdan; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2012-03) -
First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks
Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
First-principles-based screening method for resistivity scaling of anisotropic metals
Moors, Kristof; Sankaran, Kiroubanand; Pourtois, Geoffrey; Adelmann, Christoph (2022-12-23) -
Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck
Tokei, Zsolt; Vega Gonzalez, Victor; Murdoch, Gayle; O'Toole, Martin; Croes, Kristof; Baert, Rogier; van der Veen, Marleen; Adelmann, Christoph; Soulie, Jean-Philippe; Boemmels, Juergen; Wilson, Chris; Park, Seongho; Sankaran, Kiroubanand; Pourtois, Geoffrey; Swerts, Johan; Paolillo, Sara; Decoster, Stefan; Mao, Ming; Lazzarino, Frederic; Versluijs, Janko; Blanco, Victor; Ercken, Monique; Kesters, Els; Le, Quoc Toan; Holsteyns, Frank; Heylen, Nancy; Teugels, Lieve; Devriendt, Katia; Struyf, Herbert; Morin, Pierre; Jourdan, Nicolas; Van Elshocht, Sven; Ciofi, Ivan; Gupta, Anshul; Zahedmanesh, Houman; Vanstreels, Kris; Na, Myung Hee (2020) -
Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Low Tc, low Ms CoFeBX alloy as free layer material for high performance perpendicular MRAM stack
Couet, Sebastien; Rao, Siddharth; Swerts, Johan; Van Beek, Simon; Sankaran, Kiroubanand; Carpenter, Robert; Mertens, Sofie; Kim, Woojin; Crotti, Davide; Kar, Gouri Sankar (2019) -
Material and integration challenges of magnetic tunnel junctions in advanced spintronic applications
Swerts, Johan; Couet, Sebastien; Carpenter, Robert; Liu, Enlong; Hon, Kwan; Mertens, Sofie; Sankaran, Kiroubanand; Rao, Siddharth; Kim, Woojin; Garello, Kevin; Kundu, Shreya; Souriau, Laurent; Yasin, Farrukh; Sharif Md. Sadaf, Sharif; Van Elshocht, Sven; Crotti, Davide; Kar, Gouri Sankar (2019) -
Modeling challenges in nanoelectronics: an atomistic point of view
Pourtois, Geoffrey; Clima, Sergiu; Sankaran, Kiroubanand; Houssa, Michel; Eyben, Pierre; Sioncke, Sonja; Magnus, Wim; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc (2012) -
Modeling of alternative high-k dielectrics for memory based applications
Pourtois, Geoffrey; Clima, Sergiu; Sankaran, Kiroubanand; Delugas, Pietro; Fiorentini, Vincenzo; Magnus, Wim; Soree, Bart; Van Elshocht, Sven; Van Houdt, Jan; Wouters, Dirk; De Gendt, Stefan; Heyns, Marc; Kittl, Jorge (2009) -
Modeling of alternative high-k dielectrics for memory based applications
Pourtois, Geoffrey; Clima, Sergiu; Sankaran, Kiroubanand; Delugas, Pietro; Fiorentini, Vincenzo; Magnus, Wim; Soree, Bart; Van Elshocht, Sven; Adelmann, Christoph; Van Houdt, Jan; Wouters, Dirk; De Gendt, Stefan; Heyns, Marc; Kittl, Jorge (2009) -
Modeling of copper diffusion in amorphous aluminum oxide in CBRAM memory stack
Sankaran, Kiroubanand; Goux, Ludovic; Clima, Sergiu; Mees, Maarten; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith; Rignanese, Gian-Marco; Pourtois, Geoffrey (2012) -
Nitrogen-doped diamond thin films potential application in Fabry Pérot interferometer
Kosowska, M.; Majchrowicz, D.; Sankaran, Kiroubanand; Ficek, M.; Haenen, Ken (2018)