Browsing by author "Boeve, Hans"
Now showing items 21-40 of 46
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Low-resistance eschange-biased tunnel junctions obtained by natural oxidation
Boeve, Hans; De Boeck, Jo; Borghs, Gustaaf (2000) -
Low-resistance magnetic tunnel junctions by in situ natural oxidation
Boeve, Hans; De Boeck, Jo; Borghs, Gustaaf (2001) -
Magnetic anisotropy in electrodeposited Co films and spin-valves on GaAs substrates
Attenborough, Karen; Cerisier, Magali; Boeve, Hans; De Boeck, Jo; Borghs, Gustaaf; Celis, Jean-Pierre (1999) -
Magnetoresistive random access memories: integration issues for novel magnetic devices into memory cells
Boeve, Hans; Das, J.; Borghs, Gustaaf; De Boeck, Jo; Sousa, R. C.; Melo, Luis; Freitas, P. P. (1999) -
Materials aspects for integrated magneto-electronics
De Boeck, Jo; Boeve, Hans; Das, Johan; Lagae, Liesbet; Nemeth, Stefan; Liu, Zhiyu; Borghs, Gustaaf (2000) -
Materials aspects in semiconductor based spintronic devices
De Boeck, Jo; Dessein, Kristof; Liu, Zhiyu; Boeve, Hans; Nemeth, Stefan; Van Roy, Wim; Akinaga, H.; Attenborough, Karen; Borghs, Gustaaf (2000) -
Molecular beam epitaxy of III-V ferromagnetic semiconductors
Liu, Zhiyu; Nemeth, Stefan; Akinaga, Hiroyuki; Boeve, Hans; Van Roy, Wim; Moshchalkov, V. V.; Borghs, Gustaaf; De Boeck, Jo (2000) -
MRAM assessment at IMEC: an overview
Das, Johan; Boeve, Hans; Lagae, Liesbet; Eyckmans, Wouter; Borghs, Gustaaf; De Boeck, Jo (2000) -
MRAM using spin-tunnel junctions
Boeve, Hans; De Boeck, Jo; Borghs, Gustaaf (1999) -
Patterned electrodeposited spin-valve sensors
Boeve, Hans; Attenborough, Karen; De Boeck, Jo; Borghs, Gustaaf; Celis, Jean-Pierre (1999) -
Reliability of magnetic tunnel-junctions
Boeve, Hans; Oepts, W.; Girgis, E.; Schelten, J.; Coehoorn, R.; De Boeck, Jo; Borghs, Gustaaf (1999) -
Semiconductor-based spintronics, materials challenges
De Boeck, Jo; Van Roy, Wim; Akinaga, Hiroyuki; Dessein, Kristof; Liu, Zhiyu; Bruynseraede, Christophe; Van Esch, Ann; Boeve, Hans; Nemeth, Stefan; Borghs, Gustaaf (2000) -
Spin-dependent transport in soft-switching ferromagnetic components for memory applications
Boeve, Hans (2000-05) -
Spin-valve properties of ferromagnetic / semiconductor heterostructures fabricated by electrodeposition
Attenborough, Karen; Boeve, Hans; De Boeck, Jo; Celis, Jean-Pierre; Borghs, Gustaaf (2000) -
Strongly reduced bias dependence in spin-tunnel junctions obtained by ultraviolet light assisted oxidation
Boeve, Hans; Girgis, E.; Schelten, J.; De Boeck, Jo; Borghs, Gustaaf (2000) -
Structure and magnetic properties of Fe-N thin films grown by ECR deposition
Nemeth, Stefan; Akinaga, Hiroyuki; Boeve, Hans; Bender, Hugo; De Boeck, Jo; Borghs, Gustaaf (1999) -
Structure and magnetic properties of Fe-N thin films grown by ECR deposition
Nemeth, Stefan; Akinaga, Hiroyuki; Boeve, Hans; Bender, Hugo; De Boeck, Jo; Borghs, Gustaaf (1999) -
Technology and materials issues in semiconductor-based magnetoelectronics
De Boeck, Jo; Van Roy, Wim; Das, Johan; Motsnyi, Vasyl; Liu, Zhiyu; Lagae, Liesbet; Boeve, Hans; Dessein, Kristof; Borghs, Gustaaf (2002) -
Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
Boeve, Hans; Bruynseraede, Christophe; Das, J.; Dessein, Kristof; Borghs, Gustaaf; De Boeck, Jo; Sousa, R. C.; Melo, Luis; Freitas, P. P. (1999) -
Temperature effects in naturally oxidized magnetic tunnel junctions
Boeve, Hans; De Boeck, Jo; Borghs, Gustaaf (2001)