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Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer

dc.contributor.authorKudrawiec, Robert
dc.contributor.authorPaszkiewicz, B.
dc.contributor.authorMotyka, M.
dc.contributor.authorMisciewic, Jan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLorenz, Anne
dc.contributor.authorCheng, Kai
dc.contributor.authorDas, Jo
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-17T08:04:13Z
dc.date.available2021-10-17T08:04:13Z
dc.date.issued2008-11
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13966
dc.sourceIIOimport
dc.titleContactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage96108
dc.source.journalJournal of Applied Physics
dc.source.issue9
dc.source.volume104
imec.availabilityPublished - imec


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