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AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T04:58:46Z
dc.date.available2021-10-18T04:58:46Z
dc.date.issued2009
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16501
dc.sourceIIOimport
dc.titleAlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage04C101
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4
dc.source.volume48
imec.availabilityPublished - open access


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