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Unipolar organic transistor circuits made robust by dual-gate technology

dc.contributor.authorMyny, Kris
dc.contributor.authorBeenhakkers, Monique J.
dc.contributor.authorvan Aerle, Nick A.J.M.
dc.contributor.authorGelinck, Gerwin H.
dc.contributor.authorGenoe, Jan
dc.contributor.authorDehaene, Wim
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-19T16:35:56Z
dc.date.available2021-10-19T16:35:56Z
dc.date.issued2011
dc.identifier.issn0018-9200
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19466
dc.sourceIIOimport
dc.titleUnipolar organic transistor circuits made robust by dual-gate technology
dc.typeJournal article
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorDehaene, Wim
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage1223
dc.source.endpage1230
dc.source.journalIEEE Journal of Solid-State Circuits
dc.source.issue5
dc.source.volume46
imec.availabilityPublished - imec


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