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Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor

dc.contributor.authorZhang, X.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorSys, Carl
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorThrush, E. J.
dc.date.accessioned2021-09-30T10:10:48Z
dc.date.available2021-09-30T10:10:48Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2321
dc.sourceIIOimport
dc.titleHighly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage83
dc.source.endpage87
dc.source.journalJournal of Crystal Growth
dc.source.volume170
imec.availabilityPublished - open access


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