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An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Xiong
dc.contributor.authorFranco, Jacopo
dc.contributor.authorGao, Rui
dc.contributor.authorDuan, Meng
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorKaczer, Ben
dc.contributor.authorAlian, AliReza
dc.contributor.authorLinten, Dimitri
dc.contributor.authorZhou, Daisy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T19:55:53Z
dc.date.available2021-10-22T19:55:53Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25432
dc.sourceIIOimport
dc.titleAn investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3633
dc.source.endpage3639
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7274328
imec.availabilityPublished - imec


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