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Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
dc.contributor.author | Izmailov, R. A. | |
dc.contributor.author | O'Sullivan, B. J. | |
dc.contributor.author | Popovici, M. | |
dc.contributor.author | Afanas'ev, V. V. | |
dc.date.accessioned | 2021-11-02T15:59:56Z | |
dc.date.available | 2021-11-02T15:59:56Z | |
dc.date.issued | 2021-SEP | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:000672563600007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37793 | |
dc.source | WOS | |
dc.title | Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers | |
dc.type | Journal article | |
dc.contributor.imecauthor | O'Sullivan, B. J. | |
dc.contributor.imecauthor | Popovici, M. | |
dc.identifier.doi | 10.1016/j.sse.2021.108066 | |
dc.source.numberofpages | 3 | |
dc.source.peerreview | yes | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.volume | 183 | |
imec.availability | Under review |
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