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dc.contributor.authorDas, Saptarshi
dc.contributor.authorSebastian, Amritanand
dc.contributor.authorPop, Eric
dc.contributor.authorMcClellan, Connor J.
dc.contributor.authorFranklin, Aaron D.
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKnobloch, Theresia
dc.contributor.authorIllarionov, Yury
dc.contributor.authorPenumatcha, Ashish V.
dc.contributor.authorAppenzeller, Joerg
dc.contributor.authorChen, Zhihong
dc.contributor.authorZhu, Wenjuan
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorAvci, Uygar E.
dc.contributor.authorBhat, Navakanta
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorSingh, Rajendra
dc.date.accessioned2022-05-13T08:54:11Z
dc.date.available2021-12-06T02:07:01Z
dc.date.available2022-05-13T08:54:11Z
dc.date.issued2021
dc.identifier.issn2520-1131
dc.identifier.otherWOS:000722632000008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38569.2
dc.sourceWOS
dc.titleTransistors based on two-dimensional materials for future integrated circuits
dc.typeJournal article review
dc.contributor.imecauthorAsselberghs, Inge
dc.identifier.doi10.1038/s41928-021-00670-1
dc.source.numberofpages14
dc.source.peerreviewyes
dc.source.beginpage786
dc.source.endpage799
dc.source.journalNATURE ELECTRONICS
dc.source.issue11
dc.source.volume4
imec.availabilityUnder review


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