dc.contributor.author | Weyher, J. L. | |
dc.contributor.author | van Dorp, Dennis | |
dc.contributor.author | Conard, Thierry | |
dc.contributor.author | Nowak, G. | |
dc.contributor.author | Levchenko, I. | |
dc.contributor.author | Kelly, J. J. | |
dc.date.accessioned | 2022-01-20T09:13:41Z | |
dc.date.available | 2022-01-20T02:08:12Z | |
dc.date.available | 2022-01-20T09:13:41Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 1932-7447 | |
dc.identifier.other | WOS:000742124000001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38764.2 | |
dc.source | WOS | |
dc.title | Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching | |
dc.type | Journal article | |
dc.contributor.imecauthor | van Dorp, Dennis | |
dc.contributor.imecauthor | Conard, Thierry | |
dc.contributor.orcidimec | van Dorp, Dennis::0000-0002-1085-4232 | |
dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
dc.identifier.doi | 10.1021/acs.jpcc.1c06528 | |
dc.source.numberofpages | 10 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1115 | |
dc.source.endpage | 1124 | |
dc.source.journal | JOURNAL OF PHYSICAL CHEMISTRY C | |
dc.source.issue | 2 | |
dc.source.volume | 126 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | The authors thank the imec Industrial Affiliation Program on GaN RF and Power Devices for the support and Anja Vanleenhove for assisting with the XPS measurements. Assistance of J. Domeracki in SEM and discussions with Tomek Sochacki on the properties of GaN lattice are kindly acknowledged. | |