Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

dc.contributor.author	Rony, M. W.
dc.contributor.author	Zhang, En Xia
dc.contributor.author	Toguchi, Shintaro
dc.contributor.author	Luo, Xuyi
dc.contributor.author	Reaz, Mahmud
dc.contributor.author	Li, Kan
dc.contributor.author	Linten, Dimitri
dc.contributor.author	Mitard, Jerome
dc.contributor.author	Reed, Robert A.
dc.contributor.author	Fleetwood, Daniel M.
dc.contributor.author	Schrimpf, Ronald D.
dc.date.accessioned	2022-04-26T08:00:37Z
dc.date.available	2022-03-30T02:07:18Z
dc.date.available	2022-04-01T09:27:24Z
dc.date.available	2022-04-26T08:00:37Z
dc.date.issued	2022
dc.identifier.issn	0018-9499
dc.identifier.other	WOS:000770010500029
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39553.3
dc.source	WOS
dc.title	Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
dc.type	Journal article
dc.contributor.imecauthor	Linten, Dimitri
dc.contributor.imecauthor	Mitard, Jerome
dc.contributor.orcidimec	Linten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimec	Mitard, Jerome::0000-0002-7422-079X
dc.identifier.doi	10.1109/TNS.2022.3144204
dc.source.numberofpages	8
dc.source.peerreview	yes
dc.source.beginpage	299
dc.source.endpage	306
dc.source.journal	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.issue	3
dc.source.volume	69
imec.availability	Published - imec
dc.description.wosFundingText	This work was supported in part by the Air Force Research Laboratory and in part by the Air Force Office of Scientific Research.

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3	20.500.12860/39553.3*	2022-04-26T08:00:05Z	validation by library/open access desk
2	20.500.12860/39553.2	2022-03-31T08:31:43Z	validation by imec author
1	20.500.12860/39553	2022-03-30T02:07:18Z

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