dc.contributor.author | Han, Shinick | |
dc.contributor.author | Kim, Younghyun | |
dc.contributor.author | Son, Donghee | |
dc.contributor.author | Baac, Hyoung Won | |
dc.contributor.author | Won, Sang Min | |
dc.contributor.author | Shin, Changhwan | |
dc.date.accessioned | 2022-05-11T10:03:27Z | |
dc.date.available | 2022-05-02T02:11:16Z | |
dc.date.available | 2022-05-11T10:03:27Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.other | WOS:000786358400001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39723.2 | |
dc.source | WOS | |
dc.title | Study on memory characteristics of fin-shaped feedback field effect transistor | |
dc.type | Journal article | |
dc.contributor.imecauthor | Kim, Younghyun | |
dc.identifier.doi | 10.1088/1361-6641/ac643e | |
dc.source.numberofpages | 7 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 065006 | |
dc.source.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | |
dc.source.issue | 6 | |
dc.source.volume | 37 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0008745) supervised by the Korea Institute for Advancement of Technology (KIAT). | |