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Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C
dc.contributor.author | Sousa, Julia C. S. | |
dc.contributor.author | Perina, Welder F. | |
dc.contributor.author | Rangel, Roberto | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Veloso, Anabela | |
dc.contributor.author | Martino, Joao A. | |
dc.contributor.author | Agopian, Paula G. D. | |
dc.date.accessioned | 2022-05-27T02:22:58Z | |
dc.date.available | 2022-05-27T02:22:58Z | |
dc.date.issued | 2022-MAR | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:000793398000009 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39900 | |
dc.source | WOS | |
dc.title | Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Veloso, Anabela | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.identifier.doi | 10.1016/j.sse.2022.108238 | |
dc.source.numberofpages | 9 | |
dc.source.peerreview | yes | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.volume | 189 | |
imec.availability | Under review |
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