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dc.contributor.authorHuang, P.
dc.contributor.authorLuc, Q. H.
dc.contributor.authorSibaja-Hernandez, A.
dc.contributor.authorKo, H. L.
dc.contributor.authorWu, J. Y.
dc.contributor.authorTran, N. A.
dc.contributor.authorCollaert, N.
dc.contributor.authorChang, E. Y.
dc.date.accessioned2022-10-25T02:54:18Z
dc.date.available2022-10-25T02:54:18Z
dc.date.issued2022
dc.identifier.issn2168-6734
dc.identifier.otherWOS:000868319300002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40615
dc.sourceWOS
dc.titleThe Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs
dc.typeJournal article
dc.contributor.imecauthorSibaja-Hernandez, A.
dc.contributor.imecauthorCollaert, N.
dc.identifier.doi10.1109/JEDS.2022.3212377
dc.source.numberofpages6
dc.source.peerreviewyes
dc.source.beginpage854
dc.source.endpage859
dc.source.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
dc.source.volume10
imec.availabilityUnder review


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