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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
dc.contributor.author | Wang, Yu-Yun | |
dc.contributor.author | Wang, Kuan-Chi | |
dc.contributor.author | Chang, Ting -Yu | |
dc.contributor.author | Ronchi, Nicolo | |
dc.contributor.author | O'Sullivan, Barry | |
dc.contributor.author | Banerjee, Kaustuv | |
dc.contributor.author | Bosch, Geert van den | |
dc.contributor.author | Van Houdt, Jan | |
dc.contributor.author | Wu, Tian-Li | |
dc.date.accessioned | 2022-12-30T03:10:10Z | |
dc.date.available | 2022-12-30T03:10:10Z | |
dc.date.issued | 2022-NOV | |
dc.identifier.issn | 0026-2714 | |
dc.identifier.other | WOS:000896862600011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40921 | |
dc.source | WOS | |
dc.title | Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants | |
dc.type | Journal article | |
dc.contributor.imecauthor | Ronchi, Nicolo | |
dc.contributor.imecauthor | O'Sullivan, Barry | |
dc.contributor.imecauthor | Banerjee, Kaustuv | |
dc.contributor.imecauthor | Bosch, Geert van den | |
dc.contributor.imecauthor | Van Houdt, Jan | |
dc.contributor.orcidimec | Ronchi, Nicolo::0000-0002-7961-4077 | |
dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
dc.contributor.orcidimec | Banerjee, Kaustuv::0000-0001-8003-6211 | |
dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
dc.identifier.doi | 10.1016/j.microrel.2022.114680 | |
dc.source.numberofpages | 7 | |
dc.source.peerreview | yes | |
dc.source.journal | MICROELECTRONICS RELIABILITY | |
dc.source.volume | 138 | |
imec.availability | Under review |
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