dc.contributor.author | El-Sayed, Al-Moatasem | |
dc.contributor.author | Jech, Markus | |
dc.contributor.author | Waldhoer, Dominic | |
dc.contributor.author | Makarov, Alexander | |
dc.contributor.author | Vexler, Mikhail, I | |
dc.contributor.author | Tyaginov, Stanislav | |
dc.date.accessioned | 2023-04-06T10:03:11Z | |
dc.date.available | 2023-02-09T03:20:57Z | |
dc.date.available | 2023-04-06T10:00:04Z | |
dc.date.available | 2023-04-06T10:03:11Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 2475-9953 | |
dc.identifier.other | WOS:000909785500001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41076.3 | |
dc.source | WOS | |
dc.title | Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2 | |
dc.type | Journal article | |
dc.contributor.imecauthor | Makarov, Alexander | |
dc.contributor.imecauthor | Tyaginov, Stanislav | |
dc.contributor.orcidimec | Makarov, Alexander::0000-0002-9927-6511 | |
dc.contributor.orcidimec | Tyaginov, Stanislav::0000-0002-5348-2096 | |
dc.identifier.doi | 10.1103/PhysRevMaterials.6.125002 | |
dc.source.numberofpages | na | |
dc.source.peerreview | yes | |
dc.source.beginpage | nn | |
dc.source.endpage | Art. 125002 | |
dc.source.journal | PHYSICAL REVIEW MATERIALS | |
dc.source.issue | 12 | |
dc.source.volume | 6 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | The authors would like to acknowledge support from the Vienna Scientific Cluster for providing computer resources on the Austrian high-performance clusters VSC3 and VSC4. They would like to thank the Austrian Science Fund (FWF) under Project No. P31204 -N30. This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 871813, within the framework of the project Modeling Unconventional Nanoscaled Device FABrication (MUNDFAB) . This work was supported by the Ministry of Science and Higher Education of the Russian Federation under Grant No. 075-15-2020-790. For stimulating discussions on the characterization and physics of SiGe devices, the authors would like to thank V. V. Afanas?ev and M. Houssa. | |