dc.contributor.author | Ramesh, Siva | |
dc.contributor.author | Banerjee, Kaustuv | |
dc.contributor.author | Opsomer, Karl | |
dc.contributor.author | Rachita, Iuliana | |
dc.contributor.author | Bastos, Joao | |
dc.contributor.author | Soulie, Jean-Philippe | |
dc.contributor.author | Sebaai, Farid | |
dc.contributor.author | Favia, Paola | |
dc.contributor.author | Korytov, Maxim | |
dc.contributor.author | Richard, Olivier | |
dc.contributor.author | Breuil, Laurent | |
dc.contributor.author | Arreghini, Antonio | |
dc.contributor.author | Van den Bosch, Geert | |
dc.contributor.author | Rosmeulen, Maarten | |
dc.date.accessioned | 2023-04-25T09:26:25Z | |
dc.date.available | 2023-03-02T03:30:59Z | |
dc.date.available | 2023-04-25T09:26:25Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.other | WOS:000924865400019 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41213.2 | |
dc.source | WOS | |
dc.title | A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash | |
dc.type | Journal article | |
dc.contributor.imecauthor | Ramesh, Siva | |
dc.contributor.imecauthor | Banerjee, Kaustuv | |
dc.contributor.imecauthor | Opsomer, Karl | |
dc.contributor.imecauthor | Rachita, Iuliana | |
dc.contributor.imecauthor | Bastos, Joao | |
dc.contributor.imecauthor | Soulie, Jean-Philippe | |
dc.contributor.imecauthor | Sebaai, Farid | |
dc.contributor.imecauthor | Favia, Paola | |
dc.contributor.imecauthor | Korytov, Maxim | |
dc.contributor.imecauthor | Richard, Olivier | |
dc.contributor.imecauthor | Breuil, Laurent | |
dc.contributor.imecauthor | Arreghini, Antonio | |
dc.contributor.imecauthor | Van den Bosch, Geert | |
dc.contributor.imecauthor | Rosmeulen, Maarten | |
dc.contributor.orcidimec | Ramesh, Siva::0000-0002-8473-7258 | |
dc.contributor.orcidimec | Banerjee, Kaustuv::0000-0001-8003-6211 | |
dc.contributor.orcidimec | Bastos, Joao::0000-0002-8877-9850 | |
dc.contributor.orcidimec | Soulie, Jean-Philippe::0000-0002-5956-6485 | |
dc.contributor.orcidimec | Favia, Paola::0000-0002-1019-3497 | |
dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
dc.contributor.orcidimec | Breuil, Laurent::0000-0003-2869-1651 | |
dc.contributor.orcidimec | Arreghini, Antonio::0000-0002-7493-9681 | |
dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
dc.contributor.orcidimec | Rosmeulen, Maarten::0000-0002-3663-7439 | |
dc.contributor.orcidimec | Rachita, Iuliana::0000-0003-0152-6154 | |
dc.contributor.orcidimec | Sebaai, Farid::0009-0008-0186-6101 | |
dc.contributor.orcidimec | Korytov, Maxim::0009-0001-9313-7019 | |
dc.identifier.doi | 10.1109/LED.2022.3212105 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 2085 | |
dc.source.endpage | 2088 | |
dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
dc.source.issue | 12 | |
dc.source.volume | 43 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | This work was supported by IMEC's Industrial Affiliation Program on Storage Memory Devices. | |