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A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

dc.contributor.authorRamesh, Siva
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorOpsomer, Karl
dc.contributor.authorRachita, Iuliana
dc.contributor.authorBastos, Joao
dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorSebaai, Farid
dc.contributor.authorFavia, Paola
dc.contributor.authorKorytov, Maxim
dc.contributor.authorRichard, Olivier
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.date.accessioned2023-04-25T09:26:25Z
dc.date.available2023-03-02T03:30:59Z
dc.date.available2023-04-25T09:26:25Z
dc.date.issued2022
dc.identifier.issn0741-3106
dc.identifier.otherWOS:000924865400019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41213.2
dc.sourceWOS
dc.titleA Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
dc.typeJournal article
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorRachita, Iuliana
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorKorytov, Maxim
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecRachita, Iuliana::0000-0003-0152-6154
dc.contributor.orcidimecSebaai, Farid::0009-0008-0186-6101
dc.contributor.orcidimecKorytov, Maxim::0009-0001-9313-7019
dc.identifier.doi10.1109/LED.2022.3212105
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage2085
dc.source.endpage2088
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.issue12
dc.source.volume43
imec.availabilityPublished - imec
dc.description.wosFundingTextThis work was supported by IMEC's Industrial Affiliation Program on Storage Memory Devices.


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220.500.12860/41213.2*2023-04-25T09:15:09Zvalidation by library/open access desk
120.500.12860/412132023-03-02T03:30:59Z

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