Integration of Edge-Emitting Quantum Dot Lasers With Different Waveguide Platforms Using Micro-Transfer Printing

Abstract

O-band InAs/GaAs Quantum Dot edge-emitting lasers are integrated onto a number of waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si, 3 mu m Si and 300 nm SiN waveguide circuits. The processing technology to achieve release and high-yield accurate transfer of laser coupons up to 2.4 mm long and < 5 mu m thick onto the target substrates is described. At 85 mA, waveguide coupled powers of 1.0 mW and 0.95 mW are measured after out-coupling from the 220 nm SOI and 300 nm SiN waveguides, respectively while 1.7 mW total power was measured from the 3 mu m SOI waveguide.