dc.contributor.author | Li, Kan | |
dc.contributor.author | Luo, Xuyi | |
dc.contributor.author | Rony, M. W. | |
dc.contributor.author | Gorchichko, Mariia | |
dc.contributor.author | Hiblot, Gaspard | |
dc.contributor.author | Van Huylenbroeck, Stefaan | |
dc.contributor.author | Jourdain, Anne | |
dc.contributor.author | Alles, Michael L. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Zhang, En Xia | |
dc.contributor.author | Fleetwood, Daniel M. | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.date.accessioned | 2023-07-04T13:14:22Z | |
dc.date.available | 2023-05-27T20:01:00Z | |
dc.date.available | 2023-07-04T13:14:22Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.other | WOS:000975399300021 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41653.2 | |
dc.source | WOS | |
dc.title | Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics | |
dc.type | Journal article | |
dc.contributor.imecauthor | Hiblot, Gaspard | |
dc.contributor.imecauthor | Van Huylenbroeck, Stefaan | |
dc.contributor.imecauthor | Jourdain, Anne | |
dc.contributor.orcidimec | Hiblot, Gaspard::0000-0002-3869-965X | |
dc.contributor.orcidimec | Van Huylenbroeck, Stefaan::0000-0001-9978-3575 | |
dc.contributor.orcidimec | Jourdain, Anne::0000-0002-7610-0513 | |
dc.date.embargo | 9999-12-31 | |
dc.identifier.doi | 10.1109/TNS.2023.3239844 | |
dc.source.numberofpages | 7 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 442 | |
dc.source.endpage | 448 | |
dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
dc.source.issue | 4 | |
dc.source.volume | 70 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | This work was supported in part by the Department of the Defense Threat Reduction Agency through its Basic Research Program and in part by the Air Force Office of Scientific Research under Grant FA9550-17-1-0046 and Grant FA9550-22-1-0012. | |