Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

Abstract

A novel hybrid antiferroelectric (AFE)-based charge trap (CT) memory is reported focusing on an amplified tunnel oxide field (E-TO) via the dynamic of an AFE hysteresisdipole switching. The role of dynamicpermittivity increase and the saturated polarization at the instant of the write operation are explored for enhanced E-TO. The hybrid CT concept is studied by benchmarking the controlled properties of the HfO2 CT layer via the Si elemental doping in order to stabilize the linear dielectric (DE), ferroelectric (FE), or AFE response. The Si-doped HfO2 (HSO) with AFE stabilized phase shows the largest memory window (4.5 V) compared to the DE- or FE-based CT layers. The dynamic AFE dipole switching enables a maximized E TO at the instant of switching such that a high-speed and low-power CT memory is realized. The role of the tailored hysteresis shape on the E TO magnitude is studied for different Si contents and benchmarked to the Zr-doped hafnium oxide (HZO). The AFE CT multilevel coding as 1-3 bit/cell, the role of the pass voltagedisturb, and amini-NAND array operation are demonstrated. The global variability and area scalability of the HSO CT devices are studied to indicate the effect of Si contentdistributionand the area dependenceof theAFE film variability. AFE CT devices are characterized for a switching speed (<1 mu s), ten-year data retention, and 10(5) endurance. Moreover, the improvedCT characteristicsby theAFE dipole switching are explored for enhanced long-termpotentiation and depression of a synaptic device.