dc.contributor.author | Xiao, Xiaolei | |
dc.contributor.author | He, Liang | |
dc.contributor.author | Chen, Hua | |
dc.contributor.author | Wang, Xianyu | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.date.accessioned | 2024-01-11T16:16:10Z | |
dc.date.available | 2023-07-16T17:16:06Z | |
dc.date.available | 2024-01-11T16:16:10Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:001006673500001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42169.2 | |
dc.source | WOS | |
dc.title | RTS Noise Characterization of Trap Properties in InGaAs nFinFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.identifier.doi | 10.1109/TED.2023.3278612 | |
dc.source.numberofpages | 8 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 3496 | |
dc.source.endpage | 3503 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 7 | |
dc.source.volume | 70 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | This work was supported in part by the National Natural Science Foundation of China under Grant 61106062,in part by the Fundamental Research Funds for the Central Universities under Grant JB181409, in part by the Equipment Pre-Research Project of China under Grant 41402010102, and in part by the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation under Grant XWYCXY-012021016. The review of this article wasarranged by Editor M. M. Hussain. | |