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Origin of substrate hole current after gate oxide breakdown

dc.contributor.authorRasras, Mahmoud
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T22:54:17Z
dc.date.available2021-10-14T22:54:17Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6752
dc.sourceIIOimport
dc.titleOrigin of substrate hole current after gate oxide breakdown
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.beginpage2155
dc.source.endpage2160
dc.source.journalJournal of Applied Physics
dc.source.issue4
dc.source.volume91
imec.availabilityPublished - imec


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