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Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

dc.contributor.authorShamiryan, Denis
dc.contributor.authorWeidner, K.
dc.contributor.authorGray, W.D.
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T23:09:03Z
dc.date.available2021-10-14T23:09:03Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6821
dc.sourceIIOimport
dc.titleComparative study of PECVD SiOCH low-k films obtained at different deposition conditions
dc.typeJournal article
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage361
dc.source.endpage366
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume64
imec.availabilityPublished - imec
imec.internalnotesMAM2002; Vaals, The Netherlands, 3-6 March 2002


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