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Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorLebedev, O.
dc.date.accessioned2021-10-14T23:11:40Z
dc.date.available2021-10-14T23:11:40Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6833
dc.sourceIIOimport
dc.titleOptical spectroscopy of oxygen precipitates in heavily doped p-type silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage13185
dc.source.endpage13193
dc.source.journalJournal of Physics - Condensed Matter
dc.source.issue48
dc.source.volume14
imec.availabilityPublished - imec
imec.internalnotesSpecial issue containing papers presented at the Conference on Extended Defects in Semiconductors - EDS; Bologna, Italy; June 2002


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