Browsing by author "Schmidt, M."
Now showing items 1-3 of 3
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b-FeSi2/Heterojunction properties and their depedence on the b-FeSi2 preparation method
Libezny, Milan; Poortmans, Jef; Vermeulen, Tom; Nijs, Johan; Amesz, Peter Henk; Herz, K.; Powalla, M.; Reinsperger, G. U.; Schmidt, M.; Hoffmann, V.; Lange, H. (1995) -
Charge pumping and mobility measurements on strained SOI MOSFETs
Schmidt, M.; Gottlob, H. D. B.; Echermeyer, T.; Wahlbrink, T.; Mollenhauer, T.; Baus, M.; Buca, D.M.; Mantl, S.; Reiche, M.; Loo, Roger; Lemme, M.C.; Kurz, H. (2007) -
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
Driussi, F.; Esseni, D.; Selmi, L.; Schmidt, M.; Lemme, M.; Kurz, H.; Buca, D.; Mantl, S.; Luysberg, M.; Loo, Roger; Nguyen, Duy; Reiche, M. (2007)