Browsing by author "Menozzi, R."
Now showing items 1-8 of 8
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Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs
Cova, P.; Menozzi, R.; Lacey, D.; Baeyens, Yves; Fantini, F. (1995) -
Material and process related limitations of In P HEMT performance
Van Hove, Marleen; Finders, Jo; van der Zanden, Koen; De Raedt, Walter; Van Rossum, Marc; Baeyens, Yves; Schreurs, Dominique; Menozzi, R. (1997) -
Modelling of low-frequency dispersive effects in GaAs and InP HEMTs
Santarelli, A.; Vannini, G.; Borgarino, M.; Menozzi, R.; Baeyens, Yves; van der Zanden, Koen (1997) -
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
Menozzi, R.; Borgarino, M.; van der Zanden, Koen; Schreurs, Dominique (1999) -
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
Menozzi, R.; Borgarino, M.; Baeyens, Yves; Van Hove, Marleen; Fantini, F. (1997) -
Reliability testing of InP HEMT's using electrical stress methods
van der Zanden, Koen; Schreurs, Dominique; Menozzi, R.; Borgarino, M. (1999) -
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
Menozzi, R.; Borgarino, M.; Cova, P.; Baeyens, Yves; Fantini, F. (1996) -
The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
Menozzi, R.; Borgarino, M.; Baeyens, Yves; van der Zanden, Koen; Van Hove, Marleen; Fantini, F. (1997)