Browsing by author "Lin, Zaoyang"

Now showing items 1-2 of 2

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021)
Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Lin, Zaoyang; Wu, Xiangyu; Cott, Daire; Shi, Yuanyuan; Medina Silva, Henry; Sergeant, Stefanie; Conard, Thierry; Meersschaut, Johan; Nalin Mehta, Ankit; Groven, Benjamin; Morin, Pierre; Asselberghs, Inge; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Lin, Dennis; Delabie, Annelies (2024)