Browsing by author "Lin, Zaoyang"
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Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021)