Browsing by author "Pobegen, G."
Now showing items 1-4 of 4
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Analytic modeling of the bias temperature instability using capture/emission time maps
Grasser, Tibor; Wagner, Paul-Jurgen; Reisinger, Hans; Aichinger, T.; Pobegen, G.; Nelhiebel, M.; Kaczer, Ben (2011-12) -
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018) -
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Grasser, T.; Rott, K.; Reisinger, H.; Waltl, M.; Wagner, P.; Schanovsky, F.; Goes, W.; Pobegen, G.; Kaczer, Ben (2013) -
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Grasser, T.; Waltl, M.; Puschkarsky, K.; Stampfer, B.; Rzepa, G.; Pobegen, G.; Reisinger, H.; Arimura, Hiroaki; Kaczer, Ben (2017)