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Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
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Authors
Grasser, T.
;
Waltl, M.
;
Puschkarsky, K.
;
Stampfer, B.
;
Rzepa, G.
;
Pobegen, G.
;
Reisinger, H.
;
Arimura, Hiroaki
;
Kaczer, Ben
Conference
IEEE International Reliability Physics Symposium - IRPS
Title
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Publication type
Proceedings paper
Embargo date
9999-12-31
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