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Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
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Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
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Date
2017
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Grasser, T.
;
Waltl, M.
;
Puschkarsky, K.
;
Stampfer, B.
;
Rzepa, G.
;
Pobegen, G.
;
Reisinger, H.
;
Arimura, Hiroaki
;
Kaczer, Ben
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1904
since deposited on 2021-10-24
Acq. date: 2025-12-11
Citations
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Views
1904
since deposited on 2021-10-24
Acq. date: 2025-12-11
Citations