Browsing by author "Tavares, J."
Now showing items 1-8 of 8
-
Growth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples
Kyllesbech Larsen, K.; Tavares, J.; Bender, Hugo; Donaton, R. A.; Lauwers, A.; Maex, Karen (1995) -
HREM characterization of ion beam synthesized ternary silicides in (111) silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995) -
Ion beam synthesis of ternary phase CoFe-silicide in (111)Silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995) -
Structural characterization of buried epitaxial b-FeSi2 layers in (111) silicon
Tavares, J.; Bender, Hugo; Larsen, Kim Kyllesbech; Lauwers, Anne; Maex, Karen; Van Rossum, Marc (1994) -
Synthesis of CoxFe1-xSi2 with high dose ion implantation and reactive codeposition epitaxy
Vantomme, Andre; Wu, Ming Fang; Degroote, S.; Dekoster, J.; Langouche, G.; Tavares, J.; Bender, Hugo (1995) -
Synthesis of CoxFe1-xSi2 with High-Dose Ion Implantation and Reactive Codeposition Epitaxy
Vantomme, Andre; Wu, Ming Fang; Degroote, S.; Dekoster, J.; Langouche, G.; Tavares, J.; Bender, Hugo (1994) -
The formation and thermal stability of ion-beam-synthesized ternary MexFe1-xSi2(Me=Co,Ni) in Si(111)
Vantomme, Andre; Wu, Ming Fang; Langouche, G.; Tavares, J.; Bender, Hugo (1995) -
Transmission electron microscopy characterization of ion beam synthesized FeSi2 layers
Tavares, J.; Bender, Hugo; Maex, Karen (1996)