Browsing by author "Sakai, Akira"
Now showing items 1-8 of 8
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Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
Sakai, Akira; Takeuchi, Shotaro; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
Shimura, Yosuke; Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Tomographic mapping analysis in the depth direction of high-Ge-content SiGe layers with compositionally graded buffers by nanobeam X-ray diffraction
Shida, Kazuki; Takeuchi, Shotaro; Imai, Yasuhiko; Kimura, Shigeru; Schulze, Andreas; Caymax, Matty; Sakai, Akira (2017)