Browsing by author "Wang, Guilei"
Now showing items 1-3 of 3
-
Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Zhou, Longda; Liu, Qianqian; Yang, Hong; Ji, Zhigang; Xu, Hao; Wang, Guilei; Simoen, Eddy; Jiang, Haojie; Luo, Ying; Kong, Zhenzhen; Bai, Guobin; Luo, Jun; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2021) -
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Zhou, Longda; Wang, Guilei; Yin, Xiaogen; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Yang, Hong; Simoen, Eddy; Wang, Xiaolei; Ma, Xueli; Li, Yongliang; Kong, Zhenzhen; Jiang, Haojie; Luo, Ying; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2020) -
Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors
He, Liang; Simoen, Eddy; Claeys, Cor; Wang, Guilei; Luo, Jun; Zhao, Chao; Li, Junfeng; Chen, Hua; Hu, Yin; Qin, Xiaoting (2017)