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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
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Authors
Zhou, Longda
;
Wang, Guilei
;
Yin, Xiaogen
;
Ji, Zhigang
;
Liu, Qianqian
;
Xu, Hao
;
Yang, Hong
;
Simoen, Eddy
;
Wang, Xiaolei
;
Ma, Xueli
;
Li, Yongliang
;
Kong, Zhenzhen
;
Jiang, Haojie
;
Luo, Ying
;
Yin, Huaxiang
;
Zhao, Chao
;
Wang, Wenwu
DOI
10.1016/j.microrel.2020.113627
ISSN
0026-2714
Issue
na
Journal
MICROELECTRONICS RELIABILITY
Volume
107
Title
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Publication type
Journal article
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2
20.500.12860/38316.2
*
2022-01-25T11:10:49Z
validation by library/open access desk
1
20.500.12860/38316
2021-11-02T16:06:53Z
*Selected version
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