Browsing by author "Li, Yongliang"
Now showing items 1-3 of 3
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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Zhou, Longda; Wang, Guilei; Yin, Xiaogen; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Yang, Hong; Simoen, Eddy; Wang, Xiaolei; Ma, Xueli; Li, Yongliang; Kong, Zhenzhen; Jiang, Haojie; Luo, Ying; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2020) -
Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs
Chang, Hao; Zhang, Yongkui; Zhou, Longda; Ji, Zhigang; Yang, Hong; Liu, Qianqian; Li, Yongliang; Liang, Renrong; Simoen, Eddy; Zhu, Huilong; Luo, Jun; Wang, Wenwu (2021) -
Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
Zhou, Longda; Tang, Bo; Yang, Ho; Xu, Hao; Li, Yongliang; Simoen, Eddy; Yin, Huaxiang; Zhu, Huilong; Zhao, Chao; Wang, Wenwu; Chen, Dapeng; Ye, Tianchun (2018)