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Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
Publication:
Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhou, Longda
;
Tang, Bo
;
Yang, Ho
;
Xu, Hao
;
Li, Yongliang
;
Simoen, Eddy
;
Yin, Huaxiang
;
Zhu, Huilong
;
Zhao, Chao
;
Wang, Wenwu
;
Chen, Dapeng
;
Ye, Tianchun
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1935
since deposited on 2021-10-26
411
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1935
since deposited on 2021-10-26
411
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations