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Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs

Date

2018
Proceedings Paper
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dc.contributor.authorZhou, Longda
dc.contributor.authorTang, Bo
dc.contributor.authorYang, Ho
dc.contributor.authorXu, Hao
dc.contributor.authorLi, Yongliang
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYin, Huaxiang
dc.contributor.authorZhu, Huilong
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Wenwu
dc.contributor.authorChen, Dapeng
dc.contributor.authorYe, Tianchun
dc.contributor.imecauthorXu, Hao
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-26T10:50:29Z
dc.date.available2021-10-26T10:50:29Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32383
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8452559
dc.source.beginpage1
dc.source.conferenceIEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate16/07/2018
dc.source.conferencelocationSingapore Singapore
dc.source.endpage6
dc.title

Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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