Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Zhou, Longda; Wang, Guilei; Yin, Xiaogen; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Yang, Hong; Simoen, Eddy; Wang, Xiaolei; Ma, Xueli; Li, Yongliang; Kong, Zhenzhen; Jiang, Haojie; Luo, Ying; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu

doi:10.1016/j.microrel.2020.113627

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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

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2020

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https://doi.org/10.1016/j.microrel.2020.113627

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MICROELECTRONICS RELIABILITY

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1881 since deposited on 2021-11-02

Acq. date: 2026-01-11

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

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