Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Statistics
Statistics by Category
Download view's map
PNG
JPEG/JPG
Reports
Most viewed
Most viewed per month
Top city views
File Visits
Export Excel
Export CSV
Item
Views
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
1273