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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Publication:
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Date
2020
Journal article
https://doi.org/10.1016/j.microrel.2020.113627
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhou, Longda
;
Wang, Guilei
;
Yin, Xiaogen
;
Ji, Zhigang
;
Liu, Qianqian
;
Xu, Hao
;
Yang, Hong
;
Simoen, Eddy
;
Wang, Xiaolei
;
Ma, Xueli
;
Li, Yongliang
;
Kong, Zhenzhen
;
Jiang, Haojie
;
Luo, Ying
;
Yin, Huaxiang
;
Zhao, Chao
;
Wang, Wenwu
Journal
MICROELECTRONICS RELIABILITY
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1878
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations
Metrics
Views
1878
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations