Publication:

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Date

2020
Journal article
https://doi.org/10.1016/j.microrel.2020.113627
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dc.contributor.authorZhou, Longda
dc.contributor.authorWang, Guilei
dc.contributor.authorYin, Xiaogen
dc.contributor.authorJi, Zhigang
dc.contributor.authorLiu, Qianqian
dc.contributor.authorXu, Hao
dc.contributor.authorYang, Hong
dc.contributor.authorSimoen, Eddy
dc.contributor.authorWang, Xiaolei
dc.contributor.authorMa, Xueli
dc.contributor.authorLi, Yongliang
dc.contributor.authorKong, Zhenzhen
dc.contributor.authorJiang, Haojie
dc.contributor.authorLuo, Ying
dc.contributor.authorYin, Huaxiang
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Wenwu
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidextZhou, Longda::0000-0001-8969-1458
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-01-25T11:11:41Z
dc.date.available2021-11-02T16:06:53Z
dc.date.available2022-01-25T11:11:41Z
dc.date.issued2020
dc.identifier.doi10.1016/j.microrel.2020.113627
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38316
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.issuena
dc.source.journalMICROELECTRONICS RELIABILITY
dc.source.numberofpages9
dc.source.volume107
dc.subject.keywordsK HFO2/SIO2 RELIABILITY
dc.subject.keywordsDEFECT PASSIVATION
dc.subject.keywordsGATE STACK
dc.subject.keywordsFLUORINE
dc.subject.keywordsIMPROVEMENT
dc.subject.keywordsSILICON
dc.title

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

dc.typeJournal article
dspace.entity.typePublication
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