Browsing by author "Simoen, Eddy"

1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors

Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2002)

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Lee, Jae Woo; Cho, Moon Ju; Simoen, Eddy; Ritzenthaler, Romain; Togo, Mitsuhiro; Boccardi, Guillaume; Mitard, Jerome; Ragnarsson, Lars-Ake; Chiarella, Thomas; Veloso, Anabela; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013-03)

1/f noise and DLTS of LEDs

Chobola, Z.; Vasina, Petr; Sikula, J.; Jurankova, V.; Claeys, Cor; Simoen, Eddy (1996)

1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

Magnone, P.; Crupi, F.; Giusi, G.; Pace, C.; Simoen, Eddy; Claeys, Cor; Pantisano, Luigi; Maji, D.; Rao, V.R.; Srinivasan, P. (2009)

1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm

Martens, Koen; Du Bois, Bert; Van Roy, Wim; Severi, Simone; Siew, Yong Kong; Gupta, Anshul; Dupuy, Emmanuel; Radisic, Dunja; Altamirano Sanchez, Efrain; Simoen, Eddy (2019)

1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

Yan, L.; Simoen, Eddy; Olsen, S.H.; Akheyar, Amal; Claeys, Cor; O'Neill, A.G. (2009)

20-MeV alpha ray effects in AlGaAsP p-HEMTs

Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takami, Y.; Kobayashi, K.; Yoneoka, M.; Nakabayashi, M.; Hakata, T.; Takizawa, H. (2000)

60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs

Simoen, Eddy; Hermans, Jan; Vereecken, Wim; Vermoere, Carl; Claeys, C.; Augendre, Emmanuel; Badenes, Gonçal; Mohammadzadeh, A. (2001)

A comparison of intrinsic point defect properties in Si and Ge

Vanhellemont, J.; Spiewak, P.; Sueoka, K.; Simoen, Eddy; Romandic, I. (2008)

A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs

Wu, Qian; Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, Mario; Rodiguez, Rosanna; Velayudhan, Vikas; Nafria, Montserrat; Aymerich, Xavier; Gonzalez, Mireia B; Simoen, Eddy (2014)

A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique

Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010)

A deep level study of high-temperature electron-irradiated n-type Cz silicon

Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V. (2004)

A deep level study of high-temperature electron-irradiated n-type Cz silicon

Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tishenko, V.; Voitovich, V. (2003)

A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states

Simoen, Eddy; Rothschild, Aude; Vermang, Bart; Poortmans, Jef; Mertens, Robert (2011)

A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states

Simoen, Eddy; Rothschild, Aude; Vermang, Bart; Poortmans, Jef; Mertens, Robert (2011)

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019)

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020)