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1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
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1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
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Date
2009
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yan, L.
;
Simoen, Eddy
;
Olsen, S.H.
;
Akheyar, Amal
;
Claeys, Cor
;
O'Neill, A.G.
Journal
Solid-State Electronics
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Views
2072
since deposited on 2021-10-18
2
last month
2
last week
Acq. date: 2026-01-07
Citations