1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

dc.contributor.author	Yan, L.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Olsen, S.H.
dc.contributor.author	Akheyar, Amal
dc.contributor.author	Claeys, Cor
dc.contributor.author	O'Neill, A.G.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-18T05:29:59Z
dc.date.available	2021-10-18T05:29:59Z
dc.date.embargo	9999-12-31
dc.date.issued	2009
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/16571
dc.source.beginpage	1177
dc.source.endpage	1182
dc.source.issue	11
dc.source.journal	Solid-State Electronics
dc.source.volume	53
dc.title	1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
dc.type	Journal article
dspace.entity.type	Publication
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