Browsing by author "Ji, Zhigang"

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

Zhou, Longda; Zhang, Zhaohao; Yang, Hong; Ji, Zhigang; Liu, Qianqian; Zhang, Qingzhu; Simoen, Eddy; Yin, Huaxiang; Luo, Jun; Du, Anyan; Zhao, Chao; Wang, Wenwu (2021)

A Pragmatic Model to Predict Future Device Aging

Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu (2023)

A single pulse charge pumping technique for fast measurements of interface states

Lin, L.; Ji, Zhigang; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2011)

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

Zhou, Longda; Liu, Qianqian; Yang, Hong; Ji, Zhigang; Xu, Hao; Wang, Guilei; Simoen, Eddy; Jiang, Haojie; Luo, Ying; Kong, Zhenzhen; Bai, Guobin; Luo, Jun; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2021)

An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques

Ji, Zhigang; Zhang, Jian Fu; Chang, Mo Huai; Kaczer, Ben; Groeseneken, Guido (2009-05)

An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015)

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014)

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Zhou, Longda; Wang, Guilei; Yin, Xiaogen; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Yang, Hong; Simoen, Eddy; Wang, Xiaolei; Ma, Xueli; Li, Yongliang; Kong, Zhenzhen; Jiang, Haojie; Luo, Ying; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2020)

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

Chang, Hao; Zhou, Longda; Yang, Hong; Ji, Zhigang; Liu, Qianqian; Simoen, Eddy; Yin, Huaxiang; Wang, Wenwu (2021)

Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

Chang, Hao; Zhang, Yongkui; Zhou, Longda; Ji, Zhigang; Yang, Hong; Liu, Qianqian; Li, Yongliang; Liang, Renrong; Simoen, Eddy; Zhu, Huilong; Luo, Jun; Wang, Wenwu (2021)

Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques

Linten, Dimitri; Ji, Zhigang; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Scholz, Mirko; Alian, AliReza; Collaert, Nadine; Thean, Aaron (2015)

Degradation Mechanism of Short Channel p-FinFETs under Hot Carrier Stress and Constant Voltage Stress

Chang, Hao; Zhou, Longda; Yang, Hong; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Simoen, Eddy; Yin, Huaxiang; Wang, Wenwu (2020)

Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs

Ma, J; Zhang, J. F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014)

ESD characterization of planar InGaAs devices

Ji, Zhigang; Linten, Dimitri; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Alian, AliReza; Zhou, Daisy; Mols, Yves; Ivanov, Tsvetan; Franco, Jacopo; Kaczer, Ben; Zhang, X.; Gao, R.; Zhang, J.F.; Zhang, W.; Collaert, Nadine; Groeseneken, Guido (2015)

Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

Tang, Baojun; Zhang, Weidong; Degraeve, Robin; Breuil, Laurent; Blomme, Pieter; Zhang, Jianfu; Ji, Zhigang; Zahid, Mohammed; Toledano Luque, Maria; Van den Bosch, Geert; Van Houdt, Jan (2014)