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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs
IEEE International Reliability Physics Symposium (IRPS)
Journal
na
Title
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs